* Typ RDS(on) = 460mΩ
* Ultra Low Gate Charge (typ. Qg = 17.8 nC)
* Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF)
* 100% Avalanche Tested

such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220F G MOSFET.

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.

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